Neural Generative Question Answering

This paper presents an end-to-end neural network model, named Neural Generative Question Answering (GENQA), that can generate answers to simple factoid questions, based on the facts in a knowledge-base. More specifically, the model is built on the encoder-decoder framework for sequence-to-sequence learning, while equipped with the ability to enquire the knowledge-base, and is trained on a corpus of question-answer pairs, with their associated triples in the knowledge-base. Empirical study shows the proposed model can effectively deal with the variations of questions and answers, and generate right and natural answers by referring to the facts in the knowledge-base. The experiment on question answering demonstrates that the proposed model can outperform an embedding-based QA model as well as a neural dialogue model trained on the same data.Comment: Accepted by IJCAI 201

Equations of motion of test particles for solving the spin-dependent Boltzmann-Vlasov equation

A consistent derivation of the equations of motion (EOMs) of test particles for solving the spin-dependent Boltzmann-Vlasov equation is presented. The resulting EOMs in phase space are similar to the canonical equations in Hamiltonian dynamics, and the EOM of spin is the same as that in the Heisenburg picture of quantum mechanics. Considering further the quantum nature of spin and choosing the direction of total angular momentum in heavy-ion reactions as a reference of measuring nucleon spin, the EOMs of spin-up and spin-down nucleons are given separately. The key elements affecting the spin dynamics in heavy-ion collisions are identified. The resulting EOMs provide a solid foundation for using the test-particle approach in studying spin dynamics in heavy-ion collisions at intermediate energies. Future comparisons of model simulations with experimental data will help constrain the poorly known in-medium nucleon spin-orbit coupling relevant for understanding properties of rare isotopes and their astrophysical impacts.Comment: 5 page

Enhanced Gas-Flow-Induced Voltage in Graphene

We show by systemically experimental investigation that gas-flow-induced voltage in monolayer graphene is more than twenty times of that in bulk graphite. Examination over samples with sheet resistances ranging from 307 to 1600 {\Omega}/sq shows that the induced voltage increase with the resistance and can be further improved by controlling the quality and doping level of graphene. The induced voltage is nearly independent of the substrate materials and can be well explained by the interplay of Bernoulli's principle and the carrier density dependent Seebeck coefficient. The results demonstrate that graphene has great potential for flow sensors and energy conversion devices